In present work within the frame of dynamic theory for parametric X-ray radiation in two-beam\napproximation we have presented detailed studies on parametric radiation emitted by relativistic both\nelectrons and ions at channeling in crystals that is highly requested at planned experiments. The analysis\ndone has shown that the intensity of radiation at relativistic electron channeling in Si (110) with\nrespect to the conventional parametric radiation intensity has up to 5% uncertainty, while the error\nof approximate formulas for calculating parametric X-ray radiation maxima does not exceed 1.2%. We\nhave demonstrated that simple expressions for the Fourier components of Si crystal susceptibility Ãâ?¡0\nand Ãâ?¡gÃÆ? could be reduced, as well as the temperature dependence for radiation maxima in Si crystal\n(diffraction plane (110)) within Debye model. Moreover, for any types of channeled ions it is shown that\nthe parametric X-ray radiation intensity is proportional to z2âË?â??b(Z,z)/z with the function b(Z, z) depending\non the screening parameter and the ion charge number z = Z âË?â?? Ze.
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